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According to the American physicists organization nets 2 July report, British Cambridge university engineering Andrew flores victor leadership team developed a dielectric constant higher new oxidation Ha, is expected to be used in the manufacture of the next generation of more micro electronic equipment, photoelectric equipment and more efficient solar cells, etc. At present, the oxidation Ha has become a key materials of electronic industry.
Ha oxidation and the application range of the metal oxide is very extensive. Normally, they usually by spitting in the base manufacturing and into. However, when scientists trying to spitting manufacturing high quality electronic material, but ran into a problem, which is difficult to precise control of sedimentary processes and energy material properties. For this reason, the team used to Florida victor British plasma exploration Co., LTD, research and development of new deposition techniques by using high target sputtering (HiTUS) to promote plasma sputtering.
Oxidation Ha is a kind of electrical insulation, can be used in the manufacture of optical coatings, capacitors, and transistors, etc. Because Ha oxidation of dielectric constant (electric displacement and produce the electric displacement of the electric field density the ratio between the) is higher, and the higher the dielectric constant of materials, the storage charge ability is stronger, that is the greater the capacitance, some companies are now Ha replace transistors with oxidation of silicon dioxide.
Oxidation Ha can different FeiJingTi structure and polycrystalline structure of the form. But FeiJingTi structure more than lack crystalline structure of the existing within the boundaries (a polycrystalline material within two crystals, within the boundaries to meet at one point), so better than polycrystalline structure. Grain boundaries as conductive pathways, will not only make resistivity decrescent, also can cause large equipment in the uneven conductive ability, it will lead to the performance of the equipment are not uniform. However, so far, FeiJingTi oxidation Ha dielectric constant has been relatively low, only for the 20 or so, and victor team developed a Florida and new oxidation Ha dielectric constant is over 30.
Flores victor said, compared with other form, non-crystalline dielectric (including oxidation Ha) of nature more uniform, and, no boundaries and material's resistance, photon scattering higher rates even lower.
Researchers at the room temperature, the fast deposition procedure produced the new material, this made it especially suitable for used to produce organic electronic devices, the large capacity of semiconductor, etc. No grain boundaries cause the material also become a manufacturing optical coatings and high efficiency solar equipment materials ideal.
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