Physical vapor deposition is widely used in optics, electronics, information and other high-end industries, such as integrated circuits, Liquid Crystal Display (LCD), industrial glass, camera lenses, information storage, ships, chemical industry, etc. The metal target used in PVD is one of the most important raw materials in the manufacturing process such as integrated circuits and liquid crystal displays. With the continuous development of PVD technology, the demand and quality requirements for metal targets are increasing day by day. The finer the grain of metal targets, the more uniform the composition structure, the smaller the surface roughness, and the more uniform the film formed on silicon wafers by PVD. In addition, the purity of the film formed is also closely related to the purity of the metal target, so the quality of the film after PVD mainly depends on the purity and microstructure of the metal target and other factors.
Nickel (
Ni) is a kind of typical metal target of target material, the nickel corrosion of target material performance is good, good electromagnetic shielding performance, and can be used as energy materials and other important features, so it is widely used in the PVD, such as nickel can be used in other metal surface used as decorative and protective coating, the nickel metal hydride batteries used in the most important raw material of nickel sponge, It can also be produced by vacuum sputtering of
nickel targets, and nickel targets are used as sputtering sources on the surface of flexible conductive cloth used in electromagnetic shielding materials. In addition, nickel targets are widely used in the fields of plastic metal film, building glass metal film and so on. The nickel target is made by welding the nickel target blank with the backplane, and the nickel target blank is obtained by processing the nickel ingot accordingly. Therefore, the internal structure of the nickel target blank and the grain size become the key factor of whether the final nickel target can meet the demand of semiconductor sputtering. At present, the purity of nickel ingot is required to be above 4N(Ni content not less than 99.99%) when it is used to manufacture nickel target blanks. However, in the existing technology, the fabrication of high purity nickel target blanks by plastic deformation of high purity nickel ingot for semiconductor is rarely involved. Therefore, how to manufacture the high purity nickel target blanks suitable for semiconductor sputtering has become one of the problems urgently to be solved.
